High-pressure anneal

ABSTRACT

A method of treating a semiconductor device is provided including the steps of loading the semiconductor device in a processing chamber, pressurizing the processing chamber by supplying a processing gas from a pressure chamber to the processing chamber, performing a thermal anneal of the semiconductor device in the processing chamber, and depressurizing the processing chamber by supplying the processing gas from the processing chamber to the pressure chamber.

BACKGROUND OF THE INVENTION

1. Field of the Invention

Generally, the present disclosure relates to the field of manufacturingof integrated circuits and semiconductor devices, and, moreparticularly, to anneal treatment of semiconductor devices.

2. Description of the Related Art

The fabrication of advanced integrated circuits, such as CPUs, storagedevices, ASICs (application specific integrated circuits) and the like,requires the formation of a large number of circuit elements on a givenchip area according to a specified circuit layout. In a wide variety ofelectronic circuits, field effect transistors represent one importanttype of circuit element that substantially determines performance of theintegrated circuits. Generally, a plurality of process technologies arecurrently practiced for forming field effect transistors, wherein, formany types of complex circuitry, MOS technology is currently one of themost promising approaches due to the superior characteristics in view ofoperating speed and/or power consumption and/or cost efficiency. Duringthe fabrication of complex integrated circuits using, for instance, MOStechnology, millions of transistors, e.g., N-channel transistors and/orP-channel transistors, are formed on a substrate including a crystallinesemiconductor layer. Miniaturization and increase of circuit densitiesrepresent ongoing demands.

During the semiconductor manufacturing process, various different annealtreatments are performed on a semiconductor wafer, for example, duringor following oxidation, nitridation, silicidation, ion implants,chemical vapor deposition processes, etc., to achieve effective reactionwith the interface as well as the bulk of the semiconductor wafer. Ahydrogen or deuterium passivation process is also a known practiceperformed at elevated temperatures, typically at around 400-500° C.Degradation of operating performance of semiconductor devices (forexample, CMOS transistor device structures) due to hot carrier effectsattributed to hydrogen desorption at an oxide (typically siliconoxide)/semiconductor (typically silicon) interface has been recognizedfor many years. It has been proposed to subject such devices to hydrogen(H₂) or deuterium annealing at a convenient stage of the device formingprocess, before or subsequent to the formation of contacts andinterconnects.

Field effect transistors (FETs) represent semiconductor devices ofparticular importance. A field effect transistor, irrespective ofwhether an N-channel transistor or a P-channel transistor is considered,typically comprises so-called PN junctions that are formed by aninterface of highly doped regions, referred to as drain and sourceregions, with a slightly doped or non-doped region, such as a channelregion, disposed between the highly doped regions. In a field effecttransistor, the conductivity of the channel region, i.e., the drivecurrent capability of the conductive channel, is controlled by a gateelectrode formed adjacent to the channel region and separated therefromby a thin insulating layer. The conductivity of the channel region, uponformation of a conductive channel due to the application of anappropriate control voltage to the gate electrode, depends on, amongother things, the dopant concentration, the mobility of the chargecarriers and, for a given extension of the channel region in thetransistor width direction, the distance between the source and drainregions, which is also referred to as channel length. In general, amanufacturing process that uses silica (SiO₂) as gate dielectrics ofMOSFETs includes metallization followed by an anneal step at about400-450° C. Anneal processes are, however, also of importance in themanufacturing of high-k/metal gate transistors.

In principle, there are two well-known processing methods for forming aplanar or 3D transistor with a high-k/metal gate (HK/MG) structure: (1)the so-called “gate last” or “replacement gate” technique; and (2) theso-called “gate first” technique. In general, using the “gate first”technique involves forming a stack of layers of material across thesubstrate, wherein the stack of materials includes a high-k gateinsulation layer, one or more metal layers, a layer of polysilicon and aprotective cap layer, for example, silicon nitride. Thereafter, one ormore etching processes are performed to pattern the stack of materialsto thereby define the basic gate structures for the transistor devices.In the replacement gate technique, a so-called “dummy” or sacrificialgate structure is initially formed and remains in place as many processoperations are performed to form the device, for example, the formationof doped source/drain regions, performing an anneal process to repairdamage to the substrate caused by the ion implantation processes and toactivate the implanted dopant materials. At some stage of the processflow, the sacrificial gate structure is removed to define a gate cavitywhere the final HK/MG gate structure for the device is formed.Particularly, hydrogen and/or deuterium anneal of high-k gate dielectricFETs showed significant performance improvement in charge reduction,dangling bond reduction and increase of transconductance.

In all of the above-mentioned anneal processes, key determining factorsfor effective reaction include the process temperature, processing timeand the concentration of a particular gas or a mixture of gases used fora particular anneal treatment. By increasing the pressure of the processgas, it is possible to reduce both the processing temperature and theprocess time. By increasing the gas concentration at the sametemperature, the process efficiency may be improved. It should be notedthat exposure of semiconductor wafers, or more precisely integratedcircuits, to excessive heat generally degrades the quality of theintegrated circuits, in an irreversible and cumulative way. This ispartly caused by the diffusion of various carriers and ions implanted onthe wafer. The diffusion rates do increase with temperature. As thetechnology and device structures approach the nanometer scale, thelimited thermal budget requirement demands higher concentration of theprocessing gas and/or lower treatment temperature. In fact, hydrogen ordeuterium high-pressure anneal (at pressures up to some 20 atm, forexample) has been proven to provide excellent performance improvement ofsemiconductor devices.

However, during the high-pressure anneal, large amounts of theprocessing gas, for example, deuterium, are needed. The need for theprocessing gas not only significantly increases the overallmanufacturing costs but also the processing gases typically are highlyreactive, inflammable, toxic or otherwise dangerous, and when thesegases are pressurized, the likelihood of leakage of the gas from thepressure vessel or its support subsystems to the atmosphere increases.Hydrogen/deuterium gas, for example, is highly inflammable, and whenhigh concentrations of hydrogen/deuterium are exposed to oxygen in theatmosphere, it can explode.

In view of the situation described above, the present disclosureprovides techniques that allow for the high-pressure anneal ofsemiconductor devices with a significantly reduced amount of processinggas needed as compared to the art.

SUMMARY OF THE INVENTION

The following presents a simplified summary of the invention in order toprovide a basic understanding of some aspects of the invention. Thissummary is not an exhaustive overview of the invention. It is notintended to identify key or critical elements of the invention or todelineate the scope of the invention. Its sole purpose is to presentsome concepts in a simplified form as a prelude to the more detaileddescription that is discussed later.

Generally the subject matter disclosed herein relates to annealtreatment of semiconductor devices, for example, transistor devices, andmore particularly MOSFETs. Particularly, the described high-pressureanneal may be employed in the context of the manufacture of HK/MG FETs(high-k metal gate field effect transistors).

A method of treating a semiconductor device is provided including thesteps of loading the semiconductor device (or a semiconductor wafer) ina processing chamber, pressurizing the processing chamber by supplying a(pressurized) processing gas (for example, comprising or consisting ofdeuterium) from a pressure chamber to the processing chamber, performinga thermal anneal of the semiconductor device in the pressurizedprocessing chamber in the presence of the processing gas anddepressurizing the processing chamber by supplying the processing gasfrom the processing chamber to the pressure chamber after completion ofthe anneal. The anneal may be performed at a temperature in the range of150-600° C. at a pressure at least 5 atm (1 atm=101325 Pa). Contrary tothe art, after the anneal process, most of the processing gas is notexhausted and wasted, but supplied to the pressure chamber for re-use ina future anneal process. Some processing gas may be used to purge thesmall volume of the processing chamber in the beginning of the overallprocessing.

Moreover, a method of manufacturing a semiconductor device comprising ahigh-k metal gate transistor device is provided including the steps offorming a high-k dielectric layer on a semiconductor layer, forming ametal-containing layer of material on the high-k dielectric layer, andperforming an anneal treatment of the semiconductor device including thesteps of loading the semiconductor device in a processing chamber,pressurizing the processing chamber by supplying a (pressurized)processing gas from a pressure chamber to the processing chamber, andperforming a thermal anneal of the semiconductor device in thepressurized processing chamber in the presence of the processing gas.Subsequently, the processing chamber is depressurized by supplying theprocessing gas from the processing chamber to the pressure chamber aftercompletion of the thermal anneal. Passivation and reduction of hotcarrier effects may be reduced by the thermal anneal. Again, theprocessing gas may be re-used in a future anneal process.

Moreover, a method of treating a semiconductor device including asemiconductor layer and an insulating layer formed on a surface of thesemiconductor layer is provided including the steps of loading thesemiconductor device in a processing chamber, pressurizing theprocessing chamber by supplying a (pressurized) processing gascomprising deuterium from a pressure chamber to the processing chambersuch that the pressurized process chamber has a pressure of at least 5atm, performing a thermal anneal of the semiconductor device in thepressurized processing chamber to form a concentration of deuterium ofthe deuterium processing gas at the interface of the semiconductor layerand the insulating layer, and depressurizing the processing chamber bysupplying the processing gas from the processing chamber to the pressurechamber after completion of the thermal anneal. By formation of theconcentration of deuterium at the interface of the semiconductor layerand the insulating layer, degradation of the semiconductor device due tohot carrier effects is reduced.

Furthermore, an apparatus for performing a high-pressure anneal of asemiconductor device is provided including a processing chamber, apressure chamber, a conduction line connecting the processing chamberand the pressure chamber, and a control unit (for example, comprising acomputational device, a CPU and/or a microcontroller). The control unitbeing configured to control the pressurization of the processing chamberby supply of a pressurized processing gas from the pressure chamber tothe processing chamber, the thermal anneal of the semiconductor devicein the pressurized processing chamber and the depressurization of theprocessing chamber by supply of the processing gas from the processingchamber to the pressure chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be understood by reference to the followingdescription taken in conjunction with the accompanying drawings, inwhich like reference numerals identify like elements, and in which:

FIGS. 1a-1g illustrate an apparatus for high-pressure thermal anneal andoperation of the same according to an example of the present disclosure.

While the subject matter disclosed herein is susceptible to variousmodifications and alternative forms, specific embodiments thereof havebeen shown by way of example in the drawings and are herein described indetail. It should be understood, however, that the description herein ofspecific embodiments is not intended to limit the invention to theparticular forms disclosed, but on the contrary, the intention is tocover all modifications, equivalents, and alternatives falling withinthe spirit and scope of the invention as defined by the appended claims.

DETAILED DESCRIPTION

Various illustrative embodiments of the invention are described below.In the interest of clarity, not all features of an actual implementationare described in this specification. It will of course be appreciatedthat in the development of any such actual embodiment, numerousimplementation-specific decisions must be made to achieve thedevelopers' specific goals, such as compliance with system-related andbusiness-related constraints, which will vary from one implementation toanother. Moreover, it will be appreciated that such a development effortmight be complex and time-consuming, but would nevertheless be a routineundertaking for those of ordinary skill in the art having the benefit ofthis disclosure.

The following embodiments are described in sufficient detail to enablethose skilled in the art to make use of the present disclosure. It is tobe understood that other embodiments would be evident, based on thepresent disclosure, and that system, structure, process or mechanicalchanges may be made without departing from the scope of the presentdisclosure. In the following description, numeral-specific details aregiven to provide a thorough understanding of the disclosure. However, itwould be apparent that the embodiments of the disclosure may bepracticed without the specific details. In order to avoid obscuring thepresent disclosure, some well-known circuits, system configurations,structure configurations and process steps are not disclosed in detail.

The present disclosure will now be described with reference to theattached FIGURES. Various structures, systems and devices areschematically depicted in the drawings for purposes of explanation onlyand so as to not obscure the present disclosure with details which arewell known to those skilled in the art. Nevertheless, the attacheddrawings are included to describe and explain illustrative examples ofthe present disclosure. The words and phrases used herein should beunderstood and interpreted to have a meaning consistent with theunderstanding of those words and phrases by those skilled in therelevant art. No special definition of a term or phrase, i.e., adefinition that is different from the ordinary or customary meaning asunderstood by those skilled in the art, is intended to be implied byconsistent usage of the term or phrase herein. To the extent that a termor phrase is intended to have a special meaning, i.e., a meaning otherthan that understood by skilled artisans, such a special definitionshall be expressively set forth in the specification in a definitionalmanner that directly and unequivocally provides the special definitionfor the term or phrase.

As will be readily apparent to those skilled in the art upon a completereading of the present application, the presented techniques areapplicable to a variety of technologies, for example, NMOS, PMOS, CMOS,etc., and is readily applicable to a variety of devices, including, butnot limited to, logic devices, memory devices, etc. Generally,manufacturing techniques and semiconductor devices in which N-channeltransistors and/or P-channel transistors are formed are describedherein. The techniques and technologies described herein may be utilizedto fabricate MOS integrated circuit devices, including NMOS integratedcircuit devices, PMOS integrated circuit devices and CMOS integratedcircuit devices. In particular, the process steps described herein areutilized in conjunction with any semiconductor device fabricationprocess that forms gate structures for integrated circuits, includingboth planar and non-planar integrated circuits. Although the term “MOS”properly refers to a device having a metal gate electrode and an oxidegate insulator, that term is used throughout to refer to anysemiconductor device that includes a conductive gate electrode (whethermetal or other conductive material) that is positioned over a gateinsulator (whether oxide or other insulator) which, in turn, ispositioned over a semiconductor substrate.

The present disclosure provides high-pressure anneal of semiconductordevices wherein the processing gas is not exhausted and wasted after theanneal process but rather supplied back to a pressure chamber wherein itis stored until it is re-used in a subsequent anneal process. Inparticular, the anneal process may be performed in the context of themanufacture of HK/MG transistor devices.

An apparatus according to an example of the present disclosure andoperation of the same is illustrated in FIGS. 1a-1g . The apparatuscomprises a processing chamber 10 and a pressure chamber (tank) 20. Thevolume of the pressure chamber 20 is much larger than the one of theprocessing chamber 10. For example, the volume of the pressure chamber20 may be 25-200 liters and the one of the processing chamber 10 may be1-8 liters.

Both chambers 10 and 20 may be substantially made of stainless steel.The pressure chamber 20 comprises a pressurization means 21 and stores aprocessing gas used for an anneal process to be carried out in theprocessing chamber. The stored processing gas may comprise or consist ofdeuterium. In particular, the processing gas may consist of a mixture ofdeuterium and H₂. In a standby stage (FIG. 1a ), the pressure chamber 20may store the processing gas at atmospheric pressure. The pressurechamber 20 and the processing chamber 10 are connected to each other bya conduction line 30 comprising a two-way valve 31.

The processing chamber 10 comprises a heating means 11 and lift pins 12for supporting a semiconductor device to be treated in the processingchamber 10. The heating means 11 may comprise a main vessel, a heaterand a reactor cover. The processing chamber 10 may comprise a coversealed with an O-ring, for example. Any supply and exhaust linesprovided may extend through the cover. A pressure sensor and atemperature sensor (not shown) connected to a pressure and temperaturecontrol may be provided within the processing chamber 10. The pressuresensor and a temperature sensor monitor the pressure and temperature inthe processing chamber 10.

A purge line 40 with a purge valve 41 and an exhaust line 50 with anexhaust valve 51 are connected to the processing chamber 10. In astandby stage (FIG. 1a ), all valves 31, 41 and 51 are closed and thelift pins 12 are in an up-position with no wafer present in theprocessing chamber 10.

In the operation stage shown in FIG. 1b , the processing chamber 10 ispurged and a wafer 100 is loaded in the processing chamber 10. The wafer100 is supported by the lift pins 12 in the up-position. A great varietyof semiconductor devices including FETs, particularly HK/MG transistordevices, may be formed on the wafer 100. The wafer 100 may comprise asubstrate that may be a semiconductor substrate. The semiconductorsubstrate may comprise a semiconductor layer, which in turn may becomprised of any appropriate semiconductor material, such as silicon,silicon/germanium, silicon/carbon, other II-VI or III-V semiconductorcompounds and the like. The semiconductor substrate may comprise asilicon-based material containing other iso-electronic components, suchas germanium, carbon and the like. The semiconductor substrate may be asilicon substrate, in particular a single crystal silicon substrate.Other materials may be used to form the semiconductor substrate such as,for example, germanium, silicon germanium, gallium phosphate, galliumarsenide, etc. Furthermore, the substrate may define asilicon-on-insulator (SOI) configuration. In this case, the substratecomprises a semiconductor bulk substrate, for example, a bulk siliconsubstrate, a buried oxide layer formed on the semiconductor bulksubstrate and a thin semiconductor layer, for example, a semiconductorlayer comprising silicon, formed on the buried oxide layer.

Purging is performed by supplying a purge gas through purge line 40 andopened purge valve 41 and exhausting gas through exhaust line 50 andopened exhaust valve 51. The purge gas may comprise deuterium and may besupplied by a purge gas source different from the pressure chamber 20 orit may be supplied by the pressure chamber 20. However, in this exampleat this stage of operation, stage valve 31 of the conduction line 30connecting the processing chamber 10 and the pressure chamber 20maintains closed.

In order to initiate an anneal treatment of the wafer 100, the heatingmeans 11 is operated to heat up the interior of the processing chamber10 and the wafer 100 (the lift pins 12 are in a down-position) and theprocessing gas stored in the pressure chamber 20 is pressurized by thepressurization means 21. Operation of the pressurization means 21 duringthe pressurization process significantly reduces the volume occupied bythe processing gas in the pressure chamber 20. In this stage (FIG. 1c ),the purge valve 41 and the exhaust valve 51 are closed. Pressurizationof the processing chamber 10 is performed by pressurization of theprocessing gas in the pressure chamber 20 by the pressurization means 21of the same and supply of the pressurized processing gas from thepressure chamber 20 to the processing chamber 10 through the conductionline 31 and the opened valve 31. It is noted that provision of thepressurization means 21 allows for accurate adjustment of the pressureof the processing gas in the pressurized processing chamber 10.

Pressurization of the processing chamber 10 up to a pressure of morethan 5, 10, 15 or 20 atm may be considered suitable depending on theactual anneal treatment. During the anneal treatment, that might beperformed for some seconds up to half an hour at a temperature of150-600° C., for example, all valves 31, 41 and 51 are closed and thelift pins 12 supporting the wafer 100 to be treated are in adown-position (FIG. 1d ). It should be noted that, due to the smallvolume of the processing chamber 10 as compared to the pressure chamber20 and due to the high-pressure of the processing gas in the processingchamber 10, anneal times, as well as ramp down times, may besignificantly reduced as compared to the art. Thereby, for example,hillock formation of metal lines that pose a problem in conventionalback end of line (BEOL) processing may be avoided or at least reduced.

After completion of the anneal treatment, a cooling stage with allvalves 31, 41 and 51 closed and the lift pins 12 supporting the wafer100 in the up-position is reached (FIG. 1e ). After completion of thecool down phase, depressurization of the processing chamber 10 isperformed. Contrary to the art, depressurization of the processingchamber 10 is not achieved by opening the exhaust valve 51 andexhausting, and thereby wasting, the processing gas to the atmosphere,but rather the exhaust valve 51 is kept close and the valve 31 of theconduction line 30 connecting the processing chamber 10 and the pressurechamber 20 is opened (FIG. 1f ). Thus, during depressurization of theprocessing chamber 10, the processing gas is supplied from theprocessing chamber 10 back to the pressure chamber 20 via the conductionline 30 and opened valve 31. After completion of the depressurization ofthe processing chamber 10, the valve 31 of the conduction line 30 isclosed and the wafer 100 is unloaded (FIG. 1g ). Before unloading of thewafer 100, the processing chamber 10 may be purged, for example, withN₂.

The wafer or semiconductor device treated in the processing chamber 10as described above may comprise an HK/MG device. The anneal treatmentillustrated by means of FIGS. 1a-1g may be performed at any suitablepoint during the overall manufacturing of the HK/MG device. For example,it may be performed after formation of a high-k dielectric layer on asemiconductor layer or after metallization of the high-k dielectriclayer, i.e., after forming a metal-containing layer of material on thehigh-k dielectric layer such as a metal-containing work-functionadjusting layer of material. In principle, the anneal treatment may beperformed within the gate first or replacement gate techniques describedabove. The gate dielectric layer may include a high-k material having agreater dielectric constant than SiO₂, for example, Hf. The gatedielectric layer may comprise hafnium oxide, hafnium silicon oxide,zirconium oxide, aluminum oxide and the like. The high-k dielectricmaterial layer may have a thickness of one to several nanometers and maybe formed by oxidation and/or deposition, depending on the materialsrequired. The manufacturing of the HK/MG device may comprise forming agate electrode layer on or over the dielectric material layer, forexample, by metallization.

The gate electrode layer may comprise a metal gate. The material of themetal gate may depend on whether the transistor device to be formed is aP-channel transistor or an N-channel transistor. In embodiments whereinthe transistor device is an N-channel transistor, the metal may includeLa, LaN or TiN. In embodiments wherein the transistor device is aP-channel transistor, the metal may include Al, AlN or TiN. The metalgate may include a work function adjusting material, for example, TiN.In particular, the metal may comprise a work function adjusting materialthat comprises an appropriate transition metal nitride, for example,those from Groups 4-6 in the Periodic Table, including, for example,titanium nitride (TiN), tantalum nitride (TaN), titanium aluminumnitride (TiAlN), tantalum aluminum nitride (TaAlN), niobium nitride(NbN), vanadium nitride (VN), tungsten nitride (WN), and the like with athickness of about 1-60 nm. Moreover, the effective work function of themetal gate may be adjusted by added impurities, for example, Al, C or F.Moreover, the gate electrode layer may comprise a polysilicon gate atthe top of the metal gate. A cap layer may be formed atop of the gateelectrode. Sidewall spacers may be formed at sidewalls of the gateelectrode.

The manufacturing of the HK/MG device may comprise forming source anddrain regions. The source and drain regions may receive a metalsilicide, such as nickel silicide, nickel platinum silicide and thelike, thereby reducing the overall series resistance of the conductivepath between the drain and source terminals and the intermediate channelregions of the eventually completely formed transistor devices.Moreover, an interlayer dielectric (ILD), for example, made of siliconoxide, silicon nitride or silicon oxynitride, may be formed over thestructure comprising the gate electrode and the source and drain regionsand contacts may be formed in the ILD for electrically contacting thegate electrode as well as the source and drain regions. Theabove-described anneal process may be performed after formation of thecontacts. In particular, the above-described anneal process may beperformed during BEOL processing, for example, after metal deposition orbetween individual metal depositing steps.

As a result, a method and an apparatus is provided for high-pressureanneal in the context of semiconductor manufacturing wherein theprocessing gas may be used in a plurality of subsequently performedanneal treatments of semiconductor devices, for example, HK/MGtransistor devices, in a processing chamber. The processing gas issupplied from a pressure chamber to the processing chamber for theanneal process and, after completion of the anneal process, theprocessing gas is supplied to the pressure chamber. This sequence ofsteps may be repeated as often as considered suitable.

The particular embodiments disclosed above are illustrative only, as theinvention may be modified and practiced in different but equivalentmanners apparent to those skilled in the art having the benefit of theteachings herein. For example, the process steps set forth above may beperformed in a different order. Furthermore, no limitations are intendedto the details of construction or design herein shown, other than asdescribed in the claims below. It is, therefore, evident that theparticular embodiments disclosed above may be altered or modified andall such variations are considered within the scope and spirit of theinvention. Accordingly, the protection sought herein is as set forth inthe claims below.

1. A method of treating a semiconductor device, the method comprising:loading said semiconductor device in a processing chamber; pressurizingsaid processing chamber by supplying a processing gas from a pressurechamber to said processing chamber; performing a thermal anneal of saidsemiconductor device in said pressurized processing chamber in thepresence of said processing gas; and depressurizing said pressurizedprocessing chamber by supplying said processing gas from said processingchamber to said pressure chamber.
 2. The method of claim 1, wherein saidprocessing chamber is pressurized up to a pressure of more than one of 5atm, 10 atm, 15 atm and 20 atm.
 3. The method of claim 1, wherein saidprocessing chamber is connected to said pressure chamber via aconduction line including a valve, the method further comprising openingsaid valve during said pressurizing of said processing chamber, closingsaid valve during said performing of said thermal anneal and openingsaid valve during said depressurizing of said pressurized processingchamber.
 4. The method of claim 1, further comprising purging saidprocessing chamber before said step of pressurizing of said processingchamber and wherein said purging comprises supplying a purge gas to saidprocessing chamber from a purge gas source different from said pressurechamber.
 5. The method of claim 1, further comprising pressurizing saidprocessing gas in said pressure chamber before pressurizing saidprocessing chamber.
 6. The method of claim 1, wherein said processinggas comprises deuterium.
 7. A method of manufacturing a semiconductordevice comprising a high-k metal gate transistor device, the methodcomprising: forming a high-k dielectric layer on a semiconductor layer;forming a metal-containing layer of material on said high-k dielectriclayer; performing an anneal treatment of said semiconductor device, saidanneal treatment comprising: loading said semiconductor device in aprocessing chamber; pressurizing said processing chamber by supplying aprocessing gas from a pressure chamber to said processing chamber;performing a thermal anneal of said semiconductor device in saidpressurized processing chamber in the presence of said processing gas;and depressurizing said pressurized processing chamber by supplying saidprocessing gas from said processing chamber to said pressure chamber. 8.The method of claim 7, wherein said processing chamber is pressurized toa pressure of at least 5 atm.
 9. The method of claim 7, wherein saidprocessing gas comprises deuterium.
 10. The method of claim 7, whereinsaid anneal treatment is performed before forming said metal-containinglayer of material on said high-k dielectric layer.
 11. The method ofclaim 7, wherein said anneal treatment is performed after forming saidmetal-containing layer of material on said high-k dielectric layer. 12.The method of claim 7, further comprising forming source and drainregions at least partly in said semiconductor layer, wherein saidthermal anneal of said semiconductor device is performed after saidforming said source and drain regions.
 13. The method of claim 12,further comprising forming a gate electrode above said high-k dielectricand forming contacts to said source and drain regions and said gateelectrode, wherein said thermal anneal of said semiconductor device isperformed after forming said contacts.
 14. A method of treating asemiconductor device including a semiconductor layer and an insulatinglayer formed on a surface of said semiconductor layer, the methodcomprising: loading said semiconductor device in a processing chamber;pressurizing said processing chamber by supplying a processing gascomprising deuterium from a pressure chamber to said processing chambersuch that said processing chamber has a pressure of at least 5 atm;performing a thermal anneal of said semiconductor device in saidpressurized processing chamber to form a concentration of deuterium ofsaid processing gas comprising deuterium at an interface of saidsemiconductor layer and said insulating layer; and depressurizing saidpressurized processing chamber by supplying said processing gascomprising deuterium from said processing chamber to said pressurechamber.
 15. An apparatus for performing a high-pressure anneal of asemiconductor device, the apparatus comprising: a processing chamber; apressure chamber; a conduction line connecting said processing chamberand said pressure chamber; and a control unit configured to control:pressurization of said processing chamber by supply of a processing gasfrom said pressure chamber to said processing chamber; thermal annealingof said semiconductor device in said pressurized processing chamber inthe presence of said processing gas; and depressurization of saidpressurized processing chamber by supply of said processing gas fromsaid processing chamber to said pressure chamber.
 16. The apparatus ofclaim 15, further comprising a heating device installed in saidprocessing chamber.
 17. The apparatus of claim 15, further comprising apressurization means installed in said pressure chamber.
 18. Theapparatus of claim 15, further comprising a purge line different fromsaid conduction line and wherein said control unit is configured tocontrol purging of said processing chamber by supplying a purge gas tosaid processing chamber via said purge line.
 19. The apparatus of claim15, further comprising an exhaust line different from said conductionline and wherein said control unit is configured to control exhaustingof gas of said processing chamber during purging of said processingchamber.
 20. The apparatus of claim 15, wherein a volume of saidprocessing chamber is at most one of ½, ⅓, ¼, 1/10 and 1/20 of a volumeof said pressure chamber.